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Principal Engineer Technology Development (2027 New College Graduate

Job in Essex, Chittenden County, Vermont, 05451, USA
Listing for: Socket.dev
Full Time position
Listed on 2026-08-20
Job specializations:
  • Engineering
    Electrical Engineering, Process Engineer, Manufacturing Engineer, Electronics Engineer
Salary/Wage Range or Industry Benchmark: 85000 - 146000 USD Yearly USD 85000.00 146000.00 YEAR
Job Description & How to Apply Below
Position: Principal Engineer Technology Development (2027 New College Graduate)

About Global Foundries

Global Foundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power‑efficient and high‑performance solutions for high‑growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability.

For more information, visit

New College Graduates Overview:

We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills.

Summary of Role:

We are seeking a highly motivated individual with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9).New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows in CMOS, SiGe, and GaN technologies, targeting new and improved RF applications.

Essential

Responsibilities Include:

  • Innovate with integration and device team members in driving the integration of advanced process modules to be used in the technology to meet performance, reliability, yield, and cost objectives.
  • Interact with various colleagues in the broader fab teams that support technology development work, including test/characterization, failure analysis, unit process, reliability, manufacturing, and other research organizations, to facilitate and achieve program success.
  • Support technology development qualification milestones from conception through manufacturing installation. Support experimental design and execution.

    Analyze experimental and performance results, including constructional analysis, and inline measurement summarization for manufacturing capability assessments and defect level assessments.

Other Responsibilities:

  • Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

  • Ph.D. in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science, or related field from an accredited degree program.
  • A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing.
  • Fluency in English Language – written & verbal.
  • Physical Capacity Demands – some amount of time required to work in a manufacturing clean room with product handling.
  • Proficiency in MSOffice and Statistical Analysis including Cpk, Design of Experiments.

Preferred Qualifications:

  • Prior related internship or co-op experience.
  • Project management skills - the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
  • Strong planning & organizational skills.
  • Demonstrated ability to meet deadlines and commitments.
  • Strong written and verbal communication skills.
  • Excellent interpersonal skills, energetic,motivated,andself-driven.
  • Educational experience in modern device physics (FET, BJT, LDMOS, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
  • Experience in semiconductor processing in CMOS, SiGe, and/or GaN technologies for RF applications.

#NCGProgram

Expected Salary Range

$85,000.00 - $

The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at  and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for…

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