Memory Design Engineer, Pathfinding

Staff Memory Design Engineer, Pathfinding (JR102244)

As a Memory Design Engineer in Micron's Pathfinding Design Team, you will play a key role in crafting next‑generation memory technologies. This position involves contributing to defining, developing, and analyzing mixed‑signal circuits. These paths span from the memory array to the interface block for memory technologies, including DRAM and emerging memories. You will work on novel concept development, circuit simulation, optimization, and floor planning to enable groundbreaking memory solutions!

• Provide technical direction and design implementation for mixed-signal circuit strongly tied to memory core.
• Collaborate closely with physical design teams to ensure functionalities, timing closure, robustness, and power intent alignment.
• Experience with modeling and simulation of ICs using HSPICE/finesim.
• Using AI in applicable job functions.

• Bachelor’s or master’s degree in electrical engineering, Computer Engineering, or related field.
• 8+ years of experience in high‑speed/bandwidth data‑path design.
• Proficiency with UNIX and CADENCE design environment (Simulation, Schematic entry, SPF extraction).

• Memory core knowledge and design experience.
• DDR, or other high-performance memory architectures.
• Clock‑domain crossing (CDC), reset strategies, and low‑power design.
• Semi‑Custom digital circuit design (high‑speed data‑path design experience is strongly preferred).
• Analog circuit design.

Micron offers medical, dental, vision plans, paid time‑off, paid holidays, and opportunities for bonuses and equity.

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.