Principal HBM Design Architect

Overview

Micron Technology is a world leader in memory and storage solutions. As a Member of Technical Staff HBM Design Architect, you will design and develop the high-speed interface between DRAM and base die in HBM cubes, including command and control logic.

• Design DRAM command and control logic and serializing/de‑serializing scheme at the interface.
• Conduct circuit simulations using FINESIM, HSPICE, and Verilog.
• Collaborate on floor planning, full-chip testbench, and data-path design.
• Analyze timing, area, and power for high‑speed DRAM or mixed‑signal designs.
• Support development of new HBM products, including layout and optimization of memory, logic, and analog circuits.

• Extensive experience with DRAM operation and JEDEC specifications across DDR, LPDDR, GDDR, and HBM product families.
• Strong expertise in analog and mixed‑signal circuit design.
• Hands‑on proficiency in DRAM command decoding, bank logic, and RAS/CAS chain design.
• Demonstrated innovation and problem‑solving in high‑performance memory development.
• Excellent analytical, communication, and collaboration skills.

• 10+ years of proven memory‑industry experience with an MS degree, or 15+ years with a BS degree (or equivalent).
• Track record of proactive, hardworking contribution in team environments.
• Ability to work effectively across design and verification teams to drive technical alignment and execution.

Micron offers medical, dental, and vision plans, income protection, paid family leave, robust paid time‑off, and paid holidays. For more information, see the Benefits Guide at

Micron is an affirmative action employer and is proud to be an equal‑opportunity workplace. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity, or any other factor protected by applicable federal, state, or local laws.