Principal Process Engineer - Nano Diffusion

Job Title

Principal Process Engineer - Nano Diffusion #3848

A job at TSMC Arizona offers an opportunity to work at the most advanced semiconductor fab in the United States. TSMC Arizona’s first fab will operate its leading‑edge semiconductor process technology (N4 process), starting production in the first half of 2025. The second fab will utilize its leading edge N3 and N2 process technology and be operational in 2028. The recently announced third fab will manufacture chips using 2nm or even more advanced process technology, with production starting by the end of the decade.

America’s leading technology companies are ready to rely on TSMC Arizona for the next generations of chips that will power the digital future.

As a Principal Process Engineer - Nano Diffusion, you will demonstrate a strong sense of reliability and enthusiasm and will possess an attitude that embodies our core values – Integrity, Commitment, Innovation, and Customer Trust. Multiple positions available.

Lead the design and execution of experiments, interpreting and extracting insightful results from complex data sets to optimize the manufacturing process and achieve precision control at atomic levels. Work closely with other innovators in device, integration, defect reduction, lithography, etch and thin films teams to drive leading‑edge integrated module development, control, and improvements to resolve issues or specific requests from TSMC’s customers.

• Apply statistics process control methods to establish and sustain a robust manufacturing process.
• Supervise the installation and maintenance of manufacturing equipment to expand capacity with punctuation and quality.
• Collaborate effectively with equipment and material suppliers and partners to identify technology gaps and deficiencies; devise, evaluate and qualify mitigation and continuous improvement solutions.
• Review and support the work of Process Engineers.

• Must have a Master’s degree or foreign equivalent in Chemical Engineering, Electrical Engineering, Mechanical Engineering, Physics, Chemistry, Materials Science or a related field and 3 years of engineering experience.
• Alternatively, will accept a Bachelor’s degree or foreign equivalent in Chemical Engineering, Electrical Engineering, Mechanical Engineering, Physics, Chemistry, Materials Science or a related field and 5 years of postbaccalaureate, progressive engineering experience.

• Must have 2 years of experience with semiconductor process engineering.
• Must have 2 years of experience in at least 2 of the following:
  Design of Experiment (DOE); statistical process control; or statistical methods for modeling multivariate data sets.
• Must have 2 years of experience in at least 2 of the following metrology used in semiconductor processing:
  Transmission Electron Microscopy (TEM);
  Scanning Electron Microscopy (SEM);
  Critical Dimension SEM (CD-SEM);
  Energy Dispersive X-ray Spectroscopy (EDS);
  Focused Ion Beam (FIB);
  Atomic Force Microscopy (AFM); X-ray Diffraction (XRD);
  Emission Spectroscopy;
  Raman Spectroscopy;
  Spectroscopic Ellipsometry;
  Quartz PCI; or Fourier Transform Infrared Spectroscopy (FT-IR).
• Must have 2 years of experience in at least 3 of the following: wafer cross section techniques; wafer fabrication processes; ion transport phenomena; dynamic random‑access memory (DRAM); plasma etching; plasma simulation; semiconductor thin film deposition;
  Atomic Layer Deposition (ALD); 3D NAND Flash;
  Chemical Vapor Deposition (CVD); or Plasma Enhanced Chemical Vapor Deposition (PECVD).
• Must have 1 year of experience leading projects and providing career and performance feedback to junior engineers and technicians.
• Must have 1 year of experience in semiconductor 28nm-4nm tech node ion implant technology transfer and production line setup experience.
• Must have 1 year of experience with implant dose measurement equipment installation, qualification, and maintenance capabilities.
• Must have 1 year of experience in managing semiconductor process…