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Postdoctoral Researcher – Ultra-wide Bandgap Power Electronic Device Fabrication

Job in Golden, Jefferson County, Colorado, 80401, USA
Listing for: National Renewable Energy Laboratory
Full Time position
Listed on 2026-05-31
Job specializations:
  • Engineering
    Research Scientist, Electrical Engineering
Salary/Wage Range or Industry Benchmark: 76600 - 126400 USD Yearly USD 76600.00 126400.00 YEAR
Job Description & How to Apply Below

Postdoctoral Researcher – Ultra-wide Bandgap Power Electronic Device Fabrication

Location:

Golden, Colorado;
Position Type:
Postdoctoral Researcher (Fixed Term, 3 years).

Hours:

40 per week.

National Laboratory of the Rockies (NLR) invites a recent PhD graduate to conduct research on ultra‑wide bandgap (UWBG) power electronic device fabrication. The postdoc will focus on design, fabrication, and characterization of high‑breakdown‑voltage, high‑forward‑current devices based on Ga2O3, AlGaN, and other UWBG semiconductors, using TCAD design tools and clean‑room processing.

Responsibilities
  • Perform TCAD design of device structures capable of high breakdown voltages and high forward currents.
  • Fabricate Ga2O3 power diodes and transistors using power device processing and clean‑room fabrication methods, reducing interface defects and improving breakdown voltage.
  • Support basic science projects involving fabrication and characterization of horizontal and vertical AlGaN devices.
  • Conduct epitaxial material synthesis, device fabrication, and device characterization.
  • Collaborate with multidisciplinary teams and prepare technical reports and publications.
Basic Qualifications
  • Recent PhD graduate within the last three years.
  • Hands‑on experience in semiconductor device fabrication, characterization, and design in a clean‑room environment.
  • Track record in wide band‑gap semiconductor applications such as power electronics, LEDs, RF transistors, or photodetectors.
Preferred Qualifications
  • Experience with physics‑based TCAD software for device design.
  • Experience with epitaxial growth of UWBG semiconductors (MEB, MOCVD).
  • Experience with Ga2O3 or AlGaN materials and power devices, including dielectric passivation and field management.
  • Deep knowledge of semiconductor device physics, defects, dopants, band offsets.
  • In‑depth knowledge of materials characterization methods (diffraction, spectroscopy, microscopy, property measurements).
  • Equipment stewardship experience (PVD, etc.).
  • Programming skills (Lab View, C/Igor Pro, Python, MATLAB).
  • Strong self‑motivation, multitasking, time‑management, scientific communication, mentorship.
  • Industrial or national laboratory R&D experience.
Salary and Benefits
  • Annual Salary Range: $76,600 – $126,400.
  • Medical, dental, vision insurance; short‑term disability; pension; 403(b) Employee Savings Plan with employer match; life & accidental death & dismemberment (AD&D) insurance; personal time off and sick leave; paid holidays.
  • Potential performance‑based awards and relocation expense reimbursement.
Equal Opportunity Employer

All qualified applicants will receive consideration for employment without regard to age, color, disability, gender identity, genetic information, marital status, domestic partner status, military or veteran status, national origin, race, religion, creed, sex (including pregnancy, childbirth, breastfeeding), sexual orientation, and any other equivalent status protected by federal, state, or local laws. Reasonable accommodations are provided for qualified applicants with disabilities.

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