Postdoctoral Researcher - Ultra-wide Bandgap Power Electronic Device Fabrication

Posting Title

Postdoctoral Researcher - Ultra-wide Bandgap Power Electronic Device Fabrication

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Location

CO - Golden

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Position Type

Postdoc (Fixed Term)

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Hours Per Week

40

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Working at NLR

NLR is located at the foothills of the Rocky Mountains in Golden, Colorado is the nation's primary laboratory for energy systems research and development.

Join the National Laboratory of the Rockies (NLR), where world-class scientists, engineers, and experts are accelerating energy innovation through breakthrough research and systems integration. From our mission to our collaborative culture, NLR stands out in the research community for its commitment to an affordable and secure energy future. Spanning foundational science to applied systems engineering and analysis, we focus on solving complex challenges to deliver advanced, secure, reliable, and cost-effective energy solutions.

Our work helps strengthen U.S. industries, support job creation, and promote national economic growth.

At NLR, you'll find a mission-driven environment supported by state-of-the-art facilities, multidisciplinary research teams, and strong collaborations with industry, academia, and other national laboratories. We offer robust professional development opportunities, and a competitive benefits package designed to support your career and well-being.

Job Description

A postdoc position is available in the Materials, Chemical, and Computational Sciences Directorate in the area of ultra-wide bandgap (UWBG) power electronic device fabrication. The position will involve the fabrication of high breakdown voltage and high forward current power diodes and transistors based on gallium oxide (Ga2O3), aluminum gallium nitride (AlGaN), and other UWBG semiconductors. Emphasis will be placed on (1) TCAD design of device structures capable of high breakdown voltages and high forward currents, and on (2) the fabrication of these devices using power device processing and fabrication methods in a clean room.

The position will focus on reducing interface defects and improving breakdown voltage in Ga2O3 power diodes and may also support a basic science project that involves fabrication and characterization of horizontal and vertical AlGaN devices. The job duties include device design, epitaxial material synthesis, device fabrication, and device characterization. The postdoc position is a 3-year, renewed after each year of performance.

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Basic Qualifications

Must be a recent PhD graduate within the last three years.

* Must meet educational requirements prior to employment start date.

Additional

Required Qualifications

Candidates should have at least several of the following:

* Demonstrated prior hands-on experience in fabrication, characterization, and design of semiconductor devices in a cleanroom environment

* Track record in wide band gap semiconductor applications such as power electronics, light emitting diodes, RF transistors, photodetectors, etc

Note:

Please include a cover letter with your application, explaining how you meet the additional

Required Qualifications listed above, and which of the

Preferred Qualifications listed below you have. We encourage anyone who is interested in this opportunity to apply, even if they don't meet 100% of the position requirements. We seek dedicated people who believe they have the credentials, skills, and ambition to succeed at NLR to apply for this role.

Preferred Qualifications

Any of the additional prior experiences would be considered a plus:

* Prior experience using physics-based software packages (such as TCAD) to design semiconductor devices.

* Experience with epitaxial growth of ultra-wide bandgap semiconductors, such as molecular beam epitaxy or metal-organic chemical vapor deposition.

* Experience with gallium oxide or aluminum gallium nitride materials and power devices, and their dielectric passivation and electric field management.

* Awareness of semiconductor device physics such as figures of merit, defects and dopants, chemical compatibility, band offsets.

* In-depth knowledge on one or several materials characterization methods, such as diffraction, spectroscopy, microscopy, material property measurements.

* Prior…