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GaN MOCVD Engineering Lead Voltage Power Devices

Job in Goleta, Santa Barbara County, California, 93116, USA
Listing for: Renesas Electronics
Full Time position
Listed on 2026-02-17
Job specializations:
  • Engineering
Salary/Wage Range or Industry Benchmark: 180000 - 220000 USD Yearly USD 180000.00 220000.00 YEAR
Job Description & How to Apply Below
Position: GaN MOCVD Engineering Lead - High-Voltage Power Devices
A leading semiconductor company in California is seeking a Senior Staff MOCVD Development Engineer to lead process and hardware development for GaN-based epitaxial growth. Candidates must possess a Ph.D. and significant experience in MOCVD process optimization, with a strong emphasis on GaN heterostructures and cross-functional collaboration. The role offers a salary range of $180K–$220K, alongside competitive benefits and a hybrid work model.
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