FIB Engineer -IV

Location: (HTA) NCP (Hillsboro, OR)

Job : R0113583

Date Posted:

Company Name: HITACHI HIGH-TECH AMERICA, INC.

Profession (Job Category): Engineering & Science

Job Schedule: Full time

Remote: No

WORK STYLE DESIGNATION: Onsite

WORK STYLE REQUIREMENT: Onsite - 100%

WORK LOCATION: NCP (Hillsboro, OR)

EXPECTED PAY RANGE: $66,756 - $136,960 (Annually)

This pay range is for the position's base salary only. This position may be eligible for other compensation including incentive pay and/or allowances. Candidates will receive additional information during the interview and selection process.

• Use a dual beam FIB-SEM and other equipment to prepare both routine and novel samples for S/TEM analysis.
• Obtain bright field, dark field, high resolution images, EDX, diffraction patterns, and perform other analytical techniques on a S/TEM using samples prepared by themselves or others in the lab.
• An emphasis should be placed on continually developing faster and higher quality methods of sample preparation and analysis.
• Collaborate with process development engineers to understand their needs and drive the implementation of analytical methods to assist or improve the process development cycle. This could include performing or supporting other analytical needs such as EDX, EELS, etc.
• Compile data, prepare technical reports, and communicate results to customers. Use lab management software applications for sample job administration & report creation.
• Interface with internal customers, managers, and teammates within the lab.
• Critically evaluate requests to select optimum solutions, meeting or exceeding requirements and deadlines.
• Individual will support all operations of the Evaluation Lab and other requests provided by management.
• Perform all responsibilities in a safe manner. Comply with all company policies including Environmental, Health, and Safety procedures and requirements.

• Candidates should have as a minimum a Bachelor of Science degree in Chemistry, Physics, Engineering, Materials Science, or equivalent combination of education and work experience with various semiconductor analysis instruments.

• (FBE I) Should have 0-3 years of experience working with various FIB, S/TEM, and other equipment, to prepare samples and perform imaging analysis.
• (FBE I) Experience using a FIB and/or SEM to analyze semiconductor devices is highly desirable.
• (FBE I-IV) Should have 15+ years of experience working with various FIB, S/TEM, and other equipment, to prepare samples and perform imaging analysis.
• (FBE I-IV) Experience using a dual beam FIB to process semiconductor devices is required.
• Minimum travel required