Wide Bandgap Semiconductor Device and Process Integration Engineer
Listed on 2026-05-08
-
Engineering
Electronics Engineer, Electrical Engineering, Systems Engineer, Materials Engineer
The Advanced Materials and Microsystems Group (G81) aims to leverage physical properties at the small scale to develop enabling novel materials, custom microelectronics, and multifunctional microsystems. Our activities range from developing new approaches to materials discovery, pioneering work on specialized microelectronic process technologies, embedding electronic devices in fibers and fabrics, and creating new materials and new processes for additive manufacturing. Our system application space is equally broad, encompassing low-cost picosatellites fabricated in a silicon foundry, additive manufacturing of radiation shields for protecting electronic systems, persistent monitoring of wide areas of ocean using arrays of sensors and hydrophones, and specialized microchips to test and validate cooling solutions for highly integrated high-performance microprocessors.
Our high-impact work is enabled by the Microelectronics Laboratory, the Defense Fabric Discovery Center, and other cleanroom facilities at the Laboratory.
The group seeks an engineer/scientist to conduct research and development to advance the state-of-the-art in ultra-wide bandgap semiconductor devices from first-of-a-kind demonstrations to prototypes suitable for technology transfers for applications relating to RF electronics (communications, radar), power electronics (radio frequency, power conversion, sensors, etc.), and other related electronics components for extreme environments. In this role, this individual will serve as a (1) technical subject-matter expert, (2) lead and execute technical projects, (3) contribute to technology roadmaps to establish future generations of the Laboratory's special-purpose device technologies.
Duties will require familiarity and leadership in device design, understanding of epitaxial growth processes, fabrication (process development and integration), packaging, test, evaluation and analysis. In addition to technical skills, the candidates should excel in multidisciplinary teamwork, clear and effective communication, independent problem‑solving, and meeting program goals and project schedule deadlines.
- Evaluating and selecting suitable materials, composition and doping profiles, and process steps to achieve desired device specifications, manufacturability, and yield
- Collaborating closely with process engineers to define and refine process flows, experiment planning, execution, and analysis of results
- Developing novel device and circuit elements motivated by mission and system requirements
- Planning and overseeing device packaging and electrical testing (DC, CV, RF, and high voltage, etc.), thermal, and reliability characterization of fabricated devices, analyzing test data to validate models, extracting key device parameters, and identifying areas for optimization
- Investigating device failures using advanced microscopy and spectroscopy (SEM, TEM, FIB, EDX, etc.), root-cause analysis, and simulation
- Working with multidisciplinary teams (process engineering, test, characterization, packaging) to define objectives, plan development and integration strategies, manage execution, analyze data, and document experimental progress
- Supporting external engagement and communication with project sponsors for technology transfer, as needed.
- Participating in IP development, publications, and external technical collaborations as needed; and briefing diverse internal and external audiences (non-experts, sponsors and senior leadership)
- Contributing to strategic planning by creating technology roadmaps, and identifying new applications, opportunities, and partners for technology transfers
- PhD (or equivalent experience) in Electrical Engineering, Mechanical Engineering, Materials Science and Engineering or similar fields of study. Equivalent experience will be considered.
- Thorough understanding of ultra-wide band gap semiconductors, (e.g., SiC, GaN, Diamond, etc.) semiconductor device (e.g. MOSFETs, IGBTs, BJTs, HEMTs, etc.) physics, materials growth, fabrication, and characterization for power and / or radio frequency applications
- Hands‑on experience with electronic device…
(If this job is in fact in your jurisdiction, then you may be using a Proxy or VPN to access this site, and to progress further, you should change your connectivity to another mobile device or PC).