CIFRE- Développements en sonde atomique tomographique pour l’analyse chimique de BiCMOS à l’échelle atomique-H​/F

STMicroelectronics Job Opportunity

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In the context of developing advanced bipolar transistors, the characterization of materials at the atomic scale is a major challenge. Indeed, silicon doping levels must be strictly controlled at scales where the use of certain characterization techniques is not possible. To address this issue, ST collaborates with IM2NP to develop expertise in atomic tomography probe (ATP). The recent acquisition of state-of-the-art equipment at IM2NP allows for the study of increasingly complex structures, up to the bipolar transistor.

The proposed thesis work revolves around two main axes. The first axis concerns the development of methodologies for the analysis of bipolar transistors by ATP, first on simple structures (stack of layers), then on real transistors. The second axis aims to establish a link between the ATP technique and transmission electron microscopy (TEM), a reference technique in the development of new technologies.

It will involve elaborating a protocol to observe a sample in a non-destructive manner in TEM (morphology and chemical analyses), followed by its evaporation in ATP.

These objectives involve mastering the preparation of samples and the implementation of characterization by ATP. TEM characterizations will be carried out in collaboration with ST experts, once a robust preparation methodology has been established. To accomplish these missions, the thesis will mainly take place within the atomic tomography probe platform of IM2NP in Marseille, with occasional missions at the ST site in Crolles.

• BAC+5 in materials/characterization
• Interest in handling advanced characterization equipment
• Autonomy in literature study, protocol setup, and characterization implementation
• Good oral and written communication skills in English and French (supervision by two different entities)

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