Staff Engineer, VLSI Design Engineering

Responsibilities

• Design, develop, modify, and evaluate chip architecture and core/analog/data path circuit structures for feasibility studies of high‑performance NAND flash, including newest 3‑dimensional NAND memories.
• Evaluate these circuits using HSPICE, PRIMESIM, Verilog simulations, and silicon evaluation when silicon is available.

• MS or BS in Electrical Engineering (or equivalent) with 3+ years of relevant experience, or PhD with 2+ years experience is desired.
• Knowledge and/or experience in non‑volatile memory design, particularly NAND flash memory cell operation, is a significant advantage.
• A strong design and device background with experience evaluating new process technologies for design applications is preferred.
• Demonstrated ability to achieve results in a fast‑moving, dynamic environment.
• Self‑motivated and self‑directed, with proven ability to work well with others.
• Strong teamwork orientation, capable of collaborating within and beyond the immediate team.
• Excellent troubleshooting and complex problem‑analysis skills.
• Ability to multi‑task and meet deadlines.

• Excellent communication (written and verbal) and interpersonal skills.

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