Senior Memory Design Engineer; Sustaining , HBM

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s Heterogeneous Integration Group (HIG) is shaping the future of AI and accelerated computing by developing advanced memory solutions.

The team focuses on designing and optimizing High Bandwidth Memory (HBM) products for AI/ML, high-performance computing (HPC), and data‑centric systems, collaborating across global engineering and product teams to deliver industry‑leading performance, power efficiency, and reliability. As a HBM Memory Design Engineer in a sustaining role you will work with Design Engineering, Product Engineering, Process Integration, Packaging and Technology Development teams evaluating silicon issues on current HBM designs.

You will interact with architecture to understand new or modified specification requests and implement and verify the design, supporting design release to silicon and future needs. You will have an opportunity to rotate to a Design Engineer role and work on the next‑generation HBM products.

• Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution.
• Parasitic modeling and assisting in design validation, reticle experiments, and required tape‑out revisions.
• Create optimized floor plans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership.
• Simulate and verify designs using industry‑standard tools (e.g., Fine Sim, HSPICE, Verilog).
• Perform extensive power delivery network analysis and optimization.
• Assist in running various design checks prior to initial tapeouts and revision tapeouts.
• Drive innovation for future memory generations in a dynamic, collaborative environment.
• Debug and identify root causes and solutions for pre‑silicon and post‑silicon issues encountered in current HBM products.
• Engage with Standards, CAD, modeling, and verification groups to ensure the design quality.
• Prepare project status reports and lead design reviews to communicate progress and technical decisions.

• BS or MS in Electrical Engineering or a related field with 4+ years (BS) or 2+ years (MS) of relevant experience.
• Extensive knowledge of CMOS circuit design and semiconductor device physics.
• Experience with schematic entry, Verilog, Fast Spice, and HSPICE simulations.
• Strong understanding of timing/area/power/complexity trade‑offs in DRAM or mixed‑signal design.

• Strong verbal and written communication skills for conveying complex technical concepts.
• Self‑motivated, hard‑working team player who thrives in diverse environments.
• Excellent problem‑solving and analytical skills, with scripting experience (Python, TCL, Perl).
• Prior RTL design flow experience in DRAM or Foundry processes.

Micron provides a comprehensive benefits program that includes medical, dental, and vision plans, income protection, paid family leave, a robust paid time‑off program, and paid holidays. Benefit details are available on

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.