Principal RF MMIC Designer

About the Role

Seeking talented PhD researchers to drive cutting‑edge MMIC innovation s role blends deep theoretical research with advanced fabrication access and high‑impact applications in defense, satellite communications, and next‑generation wireless systems. Perfect for ambitious early‑to‑mid career researchers who want to publish, present, and explore advanced designs in leading‑edge RF/microwave technologies.

• Technical lead role for RF/MMIC architecture and design research.
• Serve as a technical lead for MMIC‑based product development, creating innovative, high‑performance GaN and GaAs (plus advanced silicon) circuits.
• Design, simulate, layout, and characterize advanced MMICs including power amplifiers, LNAs, phase shifters, switches, attenuators, multifunction circuits, and integration with BAW and SAW filters.
• Perform detailed nonlinear modeling, 2.5D/3D EM co‑simulation, and circuit optimization using ADS, HFSS, Cadence, and similar tools.
• Build and validate prototypes in state‑of‑the‑art microwave labs, including S‑parameter, noise, load‑pull, and thermal measurements.
• Execute data analysis and present results to the internal and/or external customer.
• Contribute to technology road‑mapping, novel circuit architectures, and heterogeneous integration concepts.
• Mentor junior engineers and collaborate with cross‑functional R&D teams.
• Publish novel design work internally or externally at conferences and workshops to promote Qorvo’s technology and design capabilities.
• Submit invention disclosures for potential patents where applicable.

• Recent and relevant experience designing III‑V microwave/millimeter‑wave RF/MMIC amplifiers, switches, phase shifters, attenuators, time‑delay units (TDUs), hybrid multi‑chip modules, or transmit/receive front‑end modules (FEMs).
• Experience in advanced III‑V compound semiconductor technologies, especially GaN, GaAs, and RF Silicon processes.
• Expert‑level understanding of device transistor behavioral characteristics.
• Expert‑level user of either ADS or Microwave Office (MWO) nonlinear simulators; and one or more of the following 2.5D or 3D EM simulation tools: SONNET, Axiem, Momentum, or HFSS.
• Strong understanding of microwave measurements and calibration methods: S‑parameters, power, efficiency, source/load pull, noise figure, linearity, and intermodulation distortion.
• Strong written and oral communication skills with the ability to concisely summarize highly technical concepts.

• Design of high‑performance millimeter wave GaAs or GaN MMIC power amplifiers with simultaneous power, bandwidth, efficiency, and linearity requirements.
• SiGe and/or CMOS‑based RFIC/MMIC, analog, and mixed signal design experience is a plus.
• Published author in technical journals and/or magazines.
• Strong ability to meet customer technical needs and schedules.

• BS Electrical Engineering with 12 or more years of experience
• MS Electrical Engineering with 9 or more years of experience
• PhD Electrical Engineering (with RF/Microwave focus) with 7 or more years of experience

• Dallas, TX (preferred)
• San Jose, CA
• Boston, MA

Competitive base salary commensurate with experience: $148,100 - $192,500 (subject to change dependent on physical location)

We are an Equal Employment Opportunity (EEO) employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to any characteristics protected by applicable law, including race, color, religion, sex (as defined by law), national origin, age, military or veteran status, genetic information, or disability.