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Principal Engineer-HIG HBM Architecture

Job in Richardson, Dallas County, Texas, 75080, USA
Listing for: Micron Technology, Inc.
Full Time position
Listed on 2026-07-06
Job specializations:
  • Engineering
    Systems Engineer, Test Engineer, Hardware Engineer, Electronics Engineer
Salary/Wage Range or Industry Benchmark: 146000 - 309000 USD Yearly USD 146000.00 309000.00 YEAR
Job Description & How to Apply Below

You will be responsible for the design and development of next generation HBM DRAM products in a highly multi-functional group that works closely with customers, partners, and a distributed team from Engineering, Process Development, Package Engineering, and Business Units. Your goal is to make our future HBM roadmap successful.

Responsibilities
  • Develop innovative memory subsystem architectures for HBM-based AI/ML solutions, including PHY, memory controllers, NOC, microcontrollers, MBIST, interfaces, adapters, RAS, and support for DDR/LPDDR/HBM memory types.
  • Define Memory and RAS architecture requirements and drive end‑to‑end architectural specification for next‑generation memory subsystems.
  • Collaborate with internal and external partners to develop novel architectures and detailed IP requirements across all memory subsystem components.
  • Lead engagement with IP vendors, including evaluation and selection of interface IP and functional IP blocks.
  • Analyze benchmarks, workloads, and simulation results to identify performance and efficiency innovation opportunities in memory subsystems.
  • Perform performance and power modeling; estimate gate count, power, and area; and generate architectural and external-facing specifications aligned with hardware/protocol standards.
  • Partner with RTL, validation, and multi‑functional teams to ensure successful and timely implementation of subsystem features, contributing to technical reviews for HBM and memory products.
  • Drive microarchitecture definition, participate in performance simulation and benchmarking, and debug issues across high‑level models, RTL simulation, and hard/soft IP.
Qualifications
  • Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineering, or a related field.
  • Minimum of 10 years of experience in memory subsystem architecture and design.
  • Deep understanding of memory controller design and memory types (DDR, LPDDR, GDDR, HBM).
  • Experience with PHY design and understanding of signal integrity issues.
  • Proficiency in Network‑on‑Chip (NoC) architecture and design.
  • Familiarity with industry‑standard bus protocols such as AXI, AMBA, AHB, DFI, HIF, etc.
  • Strong analytical and problem‑solving skills.
  • Excellent written and verbal communication skills.
Preferred Qualifications
  • A PhD in a relevant field, or equivalent experience.
  • Familiarity with EDA tools for design and verification.
  • Practical experience with multi‑core systems, coherent interconnects & Industry IO protocol like PCIe/CXL, confidential compute, virtualization & security.
  • Knowledge of serial link protocols (UCIe, etc.) is desired.
Compensation and Benefits

$ - $ a year. Additional compensation may include benefits, bonuses, and equity.

Micron offers medical, dental, and vision plans, income protection benefits, paid family leave, paid time‑off program, and paid holidays for all employees.

Equal Opportunity

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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