College Grad - HBM Design Architect | MS or PhD

Req  New College Grad - HBM Design Architect | MS or PhD

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

At Micron Technology, we transform how the world uses information to enrich life for all. The Heterogeneous Integration Group (HIG) HBM Architecture team develops next‑generation High‑Bandwidth Memory (HBM) solutions that power AI, high‑performance computing, cloud infrastructure, and advanced networking systems. The team works across architecture, design, verification, packaging, product engineering, and technology development to evaluate innovative memory architectures and deliver scalable, high‑performance semiconductor solutions.

As an HBM Design Architect, New College Graduate, you will contribute to the evaluation and development of future HBM and DRAM architectures. Working with experienced architects and engineering teams, you will analyze system and block‑level design tradeoffs related to performance, power, area, thermal behavior, reliability, and manufacturability. This role provides an opportunity to leverage AI, Large Language Models (LLMs), and data‑driven engineering methodologies to accelerate architecture exploration and improve decision‑making.

• Analyze HBM and DRAM architectures using analytical models, simulations, silicon data, and AI‑assisted techniques to evaluate timing, bandwidth, power, area, thermal performance, reliability, and design complexity.
• Develop and apply modeling, simulation, and data‑analysis methodologies to assess alternative architectural approaches, identify design sensitivities, and support technology pathfinding.
• Collaborate with architecture, circuit design, layout, packaging, product, and system teams to evaluate implementation feasibility, performance tradeoffs, signal integrity, power delivery, and manufacturability considerations.
• Perform root‑cause analysis using simulation and measured data to improve model accuracy, validate assumptions, and provide evidence‑based design recommendations.
• Communicate technical findings through presentations, design reviews, architecture discussions, and written documentation, clearly articulating assumptions, risks, and recommended actions.

• Master's or Ph.D. degree in Electrical Engineering, Computer Engineering, or a related field completed prior to the employment start date.
• Strong foundation in at least two of the following areas: CMOS circuits, digital or mixed‑signal design, semiconductor devices, computer architecture, memory systems, thermal sciences, signal integrity, power delivery, or advanced packaging.
• Experience developing engineering models, simulations, or analytical methodologies through graduate research, coursework, internships, or laboratory projects.
• Demonstrated ability to evaluate complex technical problems, draw evidence‑based conclusions, and communicate recommendations effectively to multidisciplinary teams.
• Strong analytical, problem‑solving, written communication, and verbal communication skills.

• Graduate research, internship, thesis, dissertation, or project experience related to HBM, DRAM, SRAM, memory controllers, high‑speed interfaces, semiconductor architecture, or 3D integration technologies.
• Experience with engineering simulation and analysis tools such as HSPICE, Fine Sim, Spectre, or similar circuit‑design environments.
• Understanding of power, performance, area, timing, thermal, and reliability tradeoffs in advanced semiconductor…