Non-Volatile Memory Design Architecture Lead Job San Jose area,California USA,Engineering

Design Architecture Lead In Non-Volatile-Engineering NAND Flash Design Team

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

As a Design Architecture Lead in Non-Volatile-Engineering NAND Flash design team at Micron Technology, Inc., your role will cover both pathfinding as well as execution of innovative non-volatile memory designs! You will work with and support the efforts of functional teams to innovate and evaluate key multi-functional features and architecture to ensure best in class memory products in terms of die size, performance, reliability and power.

In this role, you are expected to participate in definition of simulation plans, environment setup, pass/fail criteria, and coverage analysis. You will also work closely with design team members during all phases of design from concept to production. In addition, you will actively participate in the design and quality methodology improvements across the department. You will also be responsible for assisting product engineers in post-silicon design validation, root cause analysis, and providing solutions!

Responsibilities

And Duties Include, But Not Limited To:

Innovate and architect innovative memory/storage solution for high performance and energy efficient systems
Identify and innovate new concepts and features based on customer requirements
Contributing to the development of new NAND Flash Memory by assisting with the overall design, layout, and optimization of Memory/Logic circuits
Drive multi-functional team in key features evaluation and recommend decision on architecture
Working with Marketing, Probe, Assembly, Test, Process Integration, and Product Engineering groups to ensure accurate manufacturability of product
Supervising and manage the full chip verification activities including planning, tracking, and criteria setting
Proactively solicit mentorship from Standards, CAD, modeling, and verification groups to ensure the design quality
Driving innovation into the future Memory generation with dynamic work environment
Keep abreast of new sophisticated technology and architecture trends in the market

Qualifications And Skills Include, But Not Limited To:

15+ years of proven experience in non-volatile memory design
Degree/Major: BS, MS or Ph.D in Electrical Engineering (or related fields)
Broad knowledge and experience in NAND Flash memory design is required
Proven knowledge of various logic, analog, and mixed signal circuit's functionality on full chip level
Knowledge of circuit simulators such as XA, hspice and/or hsim/finesim, etc.
An understanding of semiconductor reliability issues including CHC, NBTI, stress and snapback, as well as Electromigration (EM) and IR analysis
An understanding of StarRC/Calibre parasitic extraction flow and capability to debug extraction issues

What Sets You Apart:

Good interpersonal skills with the ability to convey sophisticated technical concepts in verbal and written form
Ability to lead multi-functional team in a project environment
Ability to orchestrate AI tools adoption and deployment is highly desired
Good understanding of Agentic AI or willingness to learn Agentic AI to help develop efficient workflow.

The US base salary range that Micron Technology estimates it could pay for this full-time position is:

$ - $ a year

Additional compensation may include benefits, bonuses and equity.

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.