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Principal Device Design & Integration Engineer

Job in San Jose, Santa Clara County, California, 95199, USA
Listing for: Renesas Electronics Corporation
Full Time position
Listed on 2026-09-04
Job specializations:
  • Engineering
    Electronics Engineer, Systems Engineer, Electrical Engineering, Test Engineer
Salary/Wage Range or Industry Benchmark: 180000 - 230000 USD Yearly USD 180000.00 230000.00 YEAR
Job Description & How to Apply Below

Job Description

We are seeking a Design Engineer to lead the development of test vehicles supporting our high-current BCD (Bipolar-CMOS-DMOS) and low-voltage GaN power process and product portfolios. This role owns test vehicle definition, circuit and layout design, and characterization planning from concept through silicon bring-up, working closely with process development, product engineering, and applications teams. The ideal candidate has hands‑on experience designing power devices and circuits at both the IC and module level, and is fluent in the power topologies these test vehicles are ultimately intended to support.

Key Responsibilities
  • Define, design, and drive execution of test vehicles (TVs) for high-current BCD and LV GaN process technologies, including device test structures, scaled power stages, and full-function demonstration circuits.
  • Translate process capability targets and product roadmap requirements into test vehicle architecture and specifications.
  • Design and simulate power stage circuits (e.g., synchronous buck/boost, multiphase, half-bridge/DrMOS, gate drivers) used to validate device performance under realistic switching and thermal conditions.
  • Select and characterize power devices (LDMOS, trench MOSFETs, LV GaN HEMTs, Schottky/sync rectifiers) for inclusion in test structures, working with device/process engineering on layout-dependent tradeoffs (RDS(ON), Qg, breakdown voltage, SOA).
  • Perform IC-level layout and design for test structures, including parasitic-aware layout for switch nodes, current sensing, and gate drive paths.
  • Extend designs to module/package level as needed — co-design of power stages with packaging, magnetics, and PCB layout for evaluation boards and system-level test vehicles.
  • Develop test and characterization plans covering DC para metrics, switching performance, efficiency, transient response, and voltage/current stress margins (including switch-node ringing and abs-max validation).
  • Lead or support silicon bring‑up, debug, and correlation of measured results against simulation and design targets.
  • Collaborate cross-functionally with process integration, reliability, product/applications engineering, and test engineering to close the loop from process split data to product‑ready specifications.
  • Document design methodology, test vehicle results, and characterization data to support technology qualification and product development decisions.
Qualifications
  • Bachelor's or Master's degree in Electrical Engineering, Microelectronics, or related field.
  • 10+ years of hands‑on design experience in power semiconductor devices, analog/power ICs, or power electronics.
  • Strong working knowledge of power conversion topologies (e.g., buck, boost, multiphase/interleaved converters, half-bridge, DrMOS/Intelli-Phase-style architectures) and how topology choices drive device requirements.
  • Solid understanding of power device physics and tradeoffs across BCD process technologies and GaN (particularly low-voltage GaN HEMTs) — including RDS(ON), switching loss, gate charge, breakdown/avalanche behavior, and thermal characteristics.
  • Demonstrated experience designing test structures or test chips/vehicles for process technology development (not just product design) — comfortable defining what a process node needs to prove out.
  • IC-level design and layout experience, including parasitic-sensitive layout practices for high-current switching nodes.
  • Experience taking designs beyond the die level to module, package, or board level (e.g., power module co-design, evaluation board layout, thermal/electrical co-design).
  • Proficiency with circuit simulation tools (SPICE or equivalent) and familiarity with device/TCAD simulation concepts.
  • Ability to interpret and specify absolute maximum ratings, transient voltage tolerance, and protection thresholds (OVP/UVP/OCP/OTP) relevant to power stage reliability.
  • Strong lab skills: bring‑up, debug, and characterization using oscilloscopes, curve tracers, power analyzers, and thermal imaging.
  • Strong lab skills: bring‑up, debug, and characterization using oscilloscopes, curve tracers, power analyzers, and thermal imaging.
Additional Information

The expected annual pay…

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