Postdoctoral Research Associate

Position Title: Postdoctoral Research Associate

Job Posting Number: 2026109

NTL

Job Location: San Marcos

College/Division: College of Science and Engineering

Department/School: Ingram School of Engineering

Texas State University is a doctoral-granting institution with high research activity, dedicated to advancing innovation and expanding the frontiers of research. Our Ultrawide Bandgap Semiconductor (UWBG) lab focuses on developing next-generation UWBG materials and process technologies based on diamond, III-nitrides, and Ga₂O₃ for high-power, high-frequency, and extreme-environment electronics. Our research integrates advanced thin-film growth, laser-based processing, doping strategies, and interface engineering to enable energy-efficient, radiation-hardened, and thermally robust electronic systems, with applications spanning power electronics, space systems, and national defense technologies.

Under the Nathinal Science Foundation and Department of Defense grants, we are seeking a highly motivated and talented Postdoctoral Research Fellow to join our UWBG Semiconductor Lab. The successful candidate will work on cutting-edge research projects focused on ultrawide bandgap materials (e.g., diamond, III-nitrides, and Ga₂O₃), advancing next-generation electronic devices through innovations in thin film epitaxy, doping, interface engineering, and laser-based processing to achieve superior performance, thermal management, and energy efficiency in high-power and high-frequency applications.

• Conduct research on ultrawide bandgap (UWBG) semiconductor materials (e.g., diamond, III-nitrides, Ga₂O₃), focusing on heteroepitaxial growth, doping, defect engineering, and thermal management.
• Investigate thermal transport, interface engineering, and heat dissipation strategies in high-power and high-frequency electronic devices through experimental and modeling approaches.
• Develop and optimize thin-film growth and processing techniques (e.g., CVD, PLD, sputtering, laser annealing) for next-generation semiconductor devices.
• Perform primarily experimental research, with a smaller component involving materials modeling and atomistic simulations to support and interpret experimental results.
• Collaborate with a multidisciplinary team spanning materials science, electrical engineering, and device physics.
• Publish research findings in high-impact journals and present at leading academic and industry conferences.
• Assist the PI in research proposal development for federal funding agencies and mentor graduate and undergraduate students and support their research and professional development.

Required Qualifications

• Ph.D. in Materials Science, Electrical Engineering, Physics, or a closely related field, completed within the last 2 years or expected within the next 3 months.
• Strong background in semiconductor materials growth physics and heterointerface engineering, particularly in UWBG materials (e.g., diamond, III-nitrides, Ga₂O₃) or related areas.
• Knowledge of thin-film growth & characterization, semiconductor processing, and materials characterization techniques (e.g., CVD, PLD, MBE, laser processing, structural/electrical/optical/thermal characterization).
• Modeling, Programming and data analysis skills using tools such as COMSOL Multiphysics, MATLAB, Python, or similar scientific computing platforms.
• Hands-on experimental experience in laboratory settings, including instrumentation, materials processing/characterization, and lab safety components.
• Familiarity with materials modeling or atomistic simulation methods (e.g., molecular dynamics, DFT) is a plus.
• Demonstrated ability to work in a collaborative, multidisciplinary research environment with strong written and oral communication skills in English.
• Proven record of research productivity, evidenced by publications in reputable journals and conference proceedings.
• Strong problem-solving skills, self-motivation, and a commitment to high-quality research and career growth.

Preferred Qualifications

• Strong background in semiconductor device fabrication, thin-film growth, and materials characterization, particularly for ultrawide…