Contractor

Onto Innovation is a leader in process control, combining global scale with an expanded portfolio of leading-edge technologies that include: 3D metrology spanning the chip from nanometer-scale transistors to micron-level die-interconnects; macro defect inspection of wafers and packages; metal interconnect composition; factory analytics; and lithography for advanced semiconductor packaging. Our breadth of offerings across the entire semiconductor value chain helps our customers solve their most difficult yield, device performance, quality, and reliability issues.

Onto Innovation strives to optimize customers' critical path of progress by making them smarter, faster and more efficient.

Job Summary & Responsibilities

Position Overview

Onto Innovation is seeking a motivated intern to support exploratory research and feasibility assessment of non-contact electrical characterization methods for emerging ultra-wide-bandgap semiconductor materials.

This internship will focus on evaluating how Onto's proprietary Corona non-contact C-V metrology and related electrical characterization techniques may be applied to next-generation semiconductor materials such as AlN, AlScN, diamond, BN, and other wide- and ultra-wide-bandgap systems. These materials are being investigated for advanced power electronics, RF devices, high-temperature electronics, sensors, quantum technologies, and next-generation dielectric or piezoelectric applications.

The intern will work with experienced scientists and engineers to review relevant literature, identify promising material/device structures, support exploratory measurements, and help define potential future metrology applications.

Key Responsibilities

The intern may contribute to several of the following activities:

Conduct a technical literature review on emerging wide-bandgap and ultra-wide-bandgap semiconductor materials, including AlN, AlScN, diamond, BN, and related systems.

Identify material structures, device applications, and electrical parameters that may be relevant for non-contact C-V or surface-potential-based characterization.

Evaluate the feasibility of applying non-contact electrical metrology to new material systems, including likely measurement challenges, sample requirements, and potential limitations.

Support exploratory measurements using CnCV and related electrical characterization methods on available samples.

Assist in developing preliminary measurement approaches, recipes, or experimental plans for promising materials and structures.

Analyze measurement data and compare results against literature expectations or conventional characterization methods where available.

Summarize findings in technical reports, presentations, and roadmap-style recommendations for future development.

Learning Objectives

Through this internship, the student will gain exposure to:

Semiconductor electrical metrology and non-contact C-V characterization.

Wide-bandgap and ultra-wide-bandgap material systems.

Experimental design for new metrology applications.

Data analysis and interpretation of semiconductor electrical measurements.

Technology feasibility assessment and roadmap development.

Cross-functional collaboration with scientists, engineers, and applications teams.

Qualifications

Desired Qualifications

Required or preferred background:

Currently pursuing a Bachelor's, Master's, or Ph.D. degree in Materials Science, Electrical Engineering, Applied Physics, Semiconductor Engineering, or a related technical field.

Basic understanding of semiconductor physics, materials characterization, or electronic materials.

Interest in wide-bandgap semiconductors, power electronics, RF devices, dielectric materials, or advanced semiconductor metrology.

Ability to read and summarize technical literature.

Strong analytical and problem-solving skills.

Comfortable working with experimental data and basic data analysis tools such as Excel, Python, MATLAB, Origin, JMP, or similar software.

Good written and verbal communication skills.

Helpful but not required:

Experience with C-V, I-V, Hall effect, Kelvin probe, surface potential, DLTS, dielectric characterization, or other semiconductor electrical measurement methods.

Familiarity with SiC, GaN, AlN, diamond, AlScN, or other wide-bandgap materials.

Experience in a semiconductor lab or cleanroom environment.

Programming or scripting experience for data analysis.

Project Outcome

By the end of the internship, the intern is expected to deliver a summary of findings that may include:

A literature-based overview of candidate ultra-wide-bandgap material systems.

A ranked list of promising materials, structures, or applications for future CnCV feasibility work.

Summary of experimental results from any available sample measurements.

Recommended next steps for sample acquisition, measurement development, and potential collaboration opportunities.

About the Team

The intern will join a technical team developing advanced non-contact electrical metrology solutions for semiconductor process control. The work…