Principal GaN Epitaxy Development Engineer

IQE is a leading global supplier of compound semiconductor wafers and advanced materials. As one of the only compound semiconductor epitaxy foundries with worldwide presence and scalable manufacturing, IQE drives technology growth. Our vision is to be the top provider of advanced semiconductor materials by delivering exceptional quality, service, and innovation, making us the first choice for customers. Our strength comes from our diverse, expert workforce and a culture built on integrity, accountability, excellence, teamwork, and valuing people.

At IQE, we are committed to reaching Net Zero and creating a sustainable future. We actively strive to reduce our carbon footprint, invest in green initiatives, and embed sustainability into everything we do. Join us in driving meaningful change and making a lasting impact on the environment.

IQE is seeking a Principal GaN Epitaxy Development Engineer to join our Technology Group. This senior technical leadership role is responsible for developing advanced GaN epitaxial growth processes from early‑stage research through high‑volume manufacturing while providing technical leadership to internal teams and strategic support to customers.

You will play a key role in advancing next‑generation III‑N semiconductor technologies used in RF, power electronics, LEDs, and photonic devices.

• Lead the development of advanced GaN epitaxial growth processes using MOCVD, from concept through manufacturing.
• Design and optimize epitaxial structures for RF, power, LED, and photonic device applications.
• Develop and refine MOCVD growth recipes for state‑of‑the‑art electronic and photonic materials.
• Analyze product, process, and materials characterization data to identify performance improvements and drive continuous process optimization.
• Provide technical leadership and mentor engineers while establishing engineering best practices.
• Collaborate with manufacturing teams to successfully transition new products into production.
• Lead cross‑functional development projects and prepare New Product Introduction (NPI) and manufacturing documentation.
• Provide expert technical support to customers, ensuring products consistently meet or exceed performance requirements.
• Partner with process engineering teams to establish robust, repeatable manufacturing processes.
• Ensure compliance with all company safety, environmental, quality, and HR policies.

• PhD in Materials Science, Physics, Electrical Engineering, Chemical Engineering, or a related scientific or engineering discipline.
• Minimum of 10 years of hands‑on experience developing GaN‑based semiconductor epitaxy using MOCVD.
• Strong expertise across multiple III‑N crystal growth equipment platforms.
• Deep understanding of GaN materials for RF, power electronics, LED, and photonic applications.
• Familiarity with III‑N device fabrication and electrical/optical characterization.
• Demonstrated success leading complex technical development projects from research through manufacturing.
• Strong analytical, problem‑solving, communication, and presentation skills.
• Proven ability to collaborate effectively with customers and cross‑functional engineering teams.

• Professional Development and career pathways
• Market competitive base salaries reviewed bi‑annually
• Comprehensive health insurance offering medical, prescription, dental and vision coverage.
• Company paid Life and Disability Insurance.
• Long service awards 5, 10, 15, 20, 25 and 30 years
• Employee Assistance Program (Free family, legal, financial and counselling support 24/7 Access)
• 401k Plan with company match of up to 50% on the first 6% of the employee’s contributions

IQE is an equal opportunities employer that values diversity at all levels. All qualified applicants will receive consideration for employment without regard to race, colour, religion, sex, sexual orientation, gender identity, or national origin.