Senior CMOS analog​/mixed signal design Engineer

Role Overview

We are looking for an experienced IC Design Engineer with strong expertise in CMOS analog/mixed‑signal design and emerging NVM devices to help develop FMC’s next‑generation ferroelectric memory products based on hafnium oxide technology. You will work in close collaboration with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon.

CMOS IC design (Analog/Mixed Signal), NVM Device Design, Design tools:
Cadence, Verilog, Programming Ability: C, Verilog, Digital Design Concepts

• Design and develop emerging NVM memory devices based on hafnium oxide technology for FMC’s ferroelectric memory product portfolio.
• Define specifications and support the integration of analog and mixed‑signal blocks into the overall memory architecture.
• Design analog circuits for NVM memories (sense amplifiers, decoders, bandgaps, HV regulators, ADCs, etc.).
• Run PVT simulations and circuit verification, including parasitic extraction, to ensure performance and reliability.
• Collaborate closely with layout engineers to optimize robustness, matching, and area.
• Contribute to post‑silicon verification, debug, and optimization of memory IP and test chips.

• 5-10 Years of experience and a Degree in Electrical Engineering or related field.
• Strong background in CMOS IC design (analog/mixed signal) and NVM device design
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• Hands‑on experience with Cadence design environment and Verilog for modeling or verification.
• Familiarity with standard design and simulation flows (e.g., Cadence DFII, Virtuoso, Spice, Verilog‑A).
• Relevant experience in analog/mixed‑signal CMOS and memory/NVM design.
• Good knowledge of CMOS device physics and circuit behavior over PVT.
• Strong problem‑solving skills and ability to work effectively in cross‑functional teams.