Test Engineer - SiC & GaN Power Devices Job Torrance area,California USA,Engineering

Job Purpose

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

Job Purpose

With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.

We are seeking a Test Engineer - SiC & GaN Power Devices to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.

The Junior Test Engineer will support the Technology / CTO team in Torrance by performing on-wafer and packaged device-level electrical measurements on silicon carbide (SiC) and gallium nitride (GaN) power semiconductor devices. Working under the direction of device engineers and senior members of the device team, this role will execute defined test plans, collect accurate measurement data, maintain organized records, and help ensure that device characterization work is completed safely, consistently, and on schedule.

Key Responsibilities And Duties

Perform on-wafer electrical measurements on SiC and GaN power devices using probe stations, parameter analyzers, curve tracers, source-measure units, high-voltage test equipment, and related laboratory instrumentation.
Perform packaged device-level measurements on SiC and GaN power devices according to test instructions provided by device engineers.
Execute standard test procedures for device characterization, including DC parametric measurements, leakage, breakdown, threshold voltage, on-resistance, diode characteristics, capacitance, switching-related measurements, and other device-level tests as assigned.
Set up test fixtures, probes, cables, adapters, and measurement equipment following approved procedures and safety requirements.
Collect, review, label, and organize measurement data in approved formats so that device engineers can analyze results efficiently.
Document test conditions, sample identifiers, wafer locations, package identifiers, equipment settings, anomalies, and observations clearly and consistently.
Support repeat measurements, correlation checks, data verification, and basic troubleshooting when results appear inconsistent or unexpected.
Maintain cleanliness, organization, and safe operating practices in the test lab, including proper handling of wafers, packaged devices, fixtures, and high-voltage equipment.
Work closely with members of the device team to prioritize samples, understand test instructions, and communicate progress or issues promptly.
Help maintain test logs, equipment usage records, calibration awareness, and laboratory documentation as required.

Qualifications

Required Qualifications
Basic

Bachelor’s degree in Electrical Engineering, Electronics Engineering, Physics, Materials Science, or a related technical field; equivalent hands-on laboratory experience may be considered.
0–3 years of experience in semiconductor test, power electronics testing, device characterization, electronics laboratory work, or a related technical environment.
Basic understanding of semiconductor devices, electrical measurements, and safe laboratory practices.
Ability to follow detailed…