Principal GaN HEMT Reliability Engineer

About Global Foundries

Global Foundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, Global Foundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit .

In this GaN Device Reliability Engineering role, you will work cross functionally with integration, device, and design teams among others to drive reliability objectives through development milestones and qualification. A solid background in wide-band gap technology reliability and qualification, with an emphasis on GaN HEMT devices is essential to this role.

Fab 9, Essex Junction, VT. Candidate should be willing to relocate.

• Drive qualification and reliability testing for GF power IC technology offerings using risk based thinking and latest developments in HV device reliability physics.
• Develop and drive HTRB and HTGB fast wafer level and package level stress tests.
• Develop learning cycle and qualification test plans to address risks and achieve qualification success
• Develop and assess screening effectiveness through DOEs and subsequent reliability stresses.
• Drive root cause analysis of reliability test, initiate failure analysis work, propose corrective actions, and continually update FMEAs
• Prepare qualification plans and reports for both internal and external customers
• Function as a technical resource for reliability lab operations
• Coordinate logistics in preparing samples, allocating test time, reviewing test data, initiating the FA process
• Interact with geographically distributed engineering teams as well as external suppliers.

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

• BS Degree in Physics, Electrical Engineering, Materials Science, or other applicable field
• 4+ years of semiconductor technology and product reliability engineering experience with HV GaN HEMT devices
• A strong foundation of device and reliability physics, accelerated testing methodology, and reliability modeling methodology.
• Travel:
  On-site location = None, Remote Location = Up to 25%

• PhD in Physics, Electrical Engineering, Materials Science, or other applicable field
• Experience working with cross-functional and globally distributed teams to drive solutions to reliability challenges.
• At least one years of semiconductor technology and product reliability engineering experience
• Experience with technology and product qualification for the automotive market, including relevant AEC standards.

$85,000.00 - $. The exact salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.

An offer with Global Foundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.

Global Foundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. Global Foundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.

All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law.