RF Technology Development Device Engineer - MTS

RF Technology Development Device And TCAD Engineer

Global Foundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. Global Foundries' RF Technology Development Organization is looking for a device and TCAD engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT.

Essential Responsibilities

• You will be responsible for TCAD simulation, design, electrical characterization and analysis of SiGe HBTs and RF CMOS devices
• Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
• Work closely with process integration team for device fabrication work.
• Establish new technology design rules, test structures and test methodologies
• You will be responsible for the DC and RF characterization and analysis including high power measurements, s-parameter and loadpull
• Own and drive technical process problem solving.
• Data analysis
• Team player
• Interact with internal & external customers and respond to technical queries.
• Innovate new methods of continuous process/device improvement.
• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements

Other Responsibilities:

· Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications :

• Education:
  
  Master's Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years
• Years of
  
  Experience:
  
  3+ years in semiconductor device analysis and TCAD
• Experience in Silicon CMOS or SiGe BiCMOS TCAD and device analysis
• RF device design and characterization experience
• Experience with Cadence or any other layout and simulation tool
• Strong data analysis skills
• Fluency in English Language – written & verbal
• Ability to relocate to Essex Junction, VT

Preferred Qualifications :

• 5+ Years of Experience in Silicon or SiGe BiCMOS TCAD and device analysis
• Experience of leading a device or process development project
• Experience in RF device design and characterization including high frequency design, measurement and analysis
• Experience in noise figure and loadpull measurement and analysis
• Excellent interpersonal skills, energetic, motivated, and self-driven
• Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
• Outstanding communication skills - both written and verbal
• Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies
• Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs
• Demonstrated ability to meet deadlines and commitments

Expected Salary Range

$98,000.00 - $

The exact Salary will be determined based on qualifications, experience and location.