RF Technology Development Engineer – Principal Engineer

Device And Integration Engineer

Global Foundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. Global Foundries' RF Technology Development Organization is looking for a device and integration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT.

Essential

Responsibilities include:

• Responsible for development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirements
• Design, electrical characterization and analysis of RF devices including FET, bipolar, diodes and passives.
• Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
• Responsible for the DC and RF characterization and analysis including s-parameter, noise figure and loadpull
• DOE design, execution, and analysis of results.
• Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield
• Own and drive technical process problem solving.
• Interact with internal & external customers and respond to technical queries.
• Establish new technology design rules, test structures and test methodologies.
• Innovate new methods of continuous process/device improvement.

Other Responsibilities:

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

• Education – Graduating with Master's or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline from an accredited degree program.
• Background in CMOS device physics, semiconductor processing, and characterization
• Strong data analysis skills
• Excellent interpersonal skills, both oral and written
• Must have at least an overall 3.0 GPA and proven good academic standing.
• Language Fluency - English (Written & Verbal)

Preferred Qualifications:

• Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
• Experience in RF device design and characterization including high frequency design, measurement and analysis
• Experience with Cadence or any other layout and simulation tool
• Prior related internship or co-op experience.
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
• Strong written and verbal communication skills
• Strong planning & organizational skills

Expected Salary Range

$85,000.00 - $

The exact Salary will be determined based on qualifications, experience and location.