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RF Technology Development Engineer - MTS

Job in Essex Junction, Chittenden County, Vermont, 05452, USA
Listing for: GlobalFoundries
Full Time position
Listed on 2026-08-05
Job specializations:
  • Engineering
    Process Engineer, Electrical Engineering, Electronics Engineer, Systems Engineer
Salary/Wage Range or Industry Benchmark: 98000 USD Yearly USD 98000.00 YEAR
Job Description & How to Apply Below
Location: Essex Junction

Integration Engineer

Global Foundries' RF Technology Development Organization is looking for an integration engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT. Essential Responsibilities Responsible for development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirements DOE design, execution, and analysis of results. Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield Own and drive technical process problem solving.

Interact with internal & external customers and respond to technical queries. Establish new technology design rules, test structures and test methodologies. Innovate new methods of continuous process/device improvement. Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements

Required Qualifications:
  • Education:

    Master's Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years
  • Years of

    Experience:

    3+ years in semiconductor processing
  • Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
  • Experience with Cadence or any other layout and simulation tool
  • Strong data analysis skills
  • Fluency in English Language – written & verbal
  • Ability to relocate to Essex Junction, VT
Preferred Qualifications:
  • 5+ Years of Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
  • Experience of leading a device or process development project
  • Experience in RF device design, characterization and analysis
  • Excellent interpersonal skills, energetic, motivated, and self-driven
  • Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
  • Outstanding communication skills - both written and verbal
  • Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies
  • Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs
  • Demonstrated ability to meet deadlines and commitments

Expected Salary Range

$98,000.00 - $

The exact Salary will be determined based on qualifications, experience and location.

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