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Technology Development Engineering Intern, Power GaN (Summer 2027

Job in Essex Junction, Chittenden County, Vermont, 05453, USA
Listing for: GLOBALFOUNDRIES U.S. INC.
Seasonal/Temporary, Apprenticeship/Internship position
Listed on 2026-08-22
Job specializations:
  • Engineering
    Electrical Engineering, Systems Engineer
Salary/Wage Range or Industry Benchmark: 20 - 40 USD Hourly USD 20.00 40.00 HOUR
Job Description & How to Apply Below
Position: Technology Development Engineering Intern, Power GaN (Summer 2027)
Location: Essex Junction

About Global Foundries Global Foundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power‑efficient and high‑performance solutions for high‑growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world.

GF’s talented, global team remains focused every day on security, longevity and sustainability. For more information, visit

Internship Program Overview

Our Interns & Co-ops are our entry‑level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast‑paced and growing semiconductor industry after graduation. As an intern at GF, you’ll experience one‑on‑one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

Summary

of Role

Join our Technology Development team in order to develop and qualify world class differentiated semiconductor technologies for our 200mm manufacturing fabricator. Specifically, this posting is for a semiconductor process and/or test development engineering intern.

Essential Responsibilities
  • Initial and primary responsibilities include working with the technology development integration and process teams as well as test and device engineers in driving the integration of advanced process modules to be used in the technology to meet performance, reliability, yield, and cost objectives.
  • Develop differentiated offerings in 130nm, 90nm, and sub 90nm nodes in CMOS, SiGe, and GaN technologies targeting new and improved RF applications.
  • Lead and drive interactions with various engineering teams outside the immediate area, e.g., testing, failure analysis, unit process, reliability, manufacturing, and research organizations, to facilitate and achieve program success.
  • Support technology development qualification milestones from conception through manufacturing installation.
  • Support experimental design and execution.
  • Analyze experimental and performance results, including constructional analysis, and inline measurement summarization for manufacturing capability assessments and defect level assessments.
Other Responsibilities
  • Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
Required Qualifications
  • Education - Minimum Graduating Senior or Junior from an undergraduate program in Electrical Engineering, Solid State Physics, Microelectronics, or other relevant engineering or physical science discipline.
  • A basic knowledge of modern semiconductor device physics and device characterization.
  • A basic knowledge of semiconductor processing.
  • Language Fluency – Fluent in English Language – written & verbal
Preferred Qualifications
  • Prior related internship or co‑op experience
  • Project management skills, i.e. the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
  • Strong written and verbal communication skills
  • Strong planning & organizational skills
  • Current Master’s or PhD Student in a Semiconductor discipline
  • Educational experience in modern device physics (FET, BJT, LDMOS, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
  • Experience in semiconductor processing in CMOS, SiGe, and/or GaN technologies for RF applications.
  • Experience with semiconductor device wafer level electrical testing, analysis, and characterization.
Internship Program US Salary Information

Expected Salary Range $20.00 - $40.00 Expected Salary Range $0.00 - $0.00 The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at  and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a…

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