SiGe HBT Device Modelling Intern; Summer

About Global Foundries

Global Foundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power-efficient and high-performance solutions for high-growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability.

For more information, visit

Global Foundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power-efficient and high-performance solutions for high-growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability.

For more information, visit

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast‑paced and growing semiconductor industry after graduation. As an intern at GF, you’ll experience one‑on‑one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

In this position, the device modelling intern will collaborate with an RF device modelling team to develop device modeling capabilities for advanced semiconductor SiGe HBT devices. The responsibilities include applying device physics principles, characterizing devices using DC/RF methods, and utilizing the advanced HiCUM L2 V3.0 industry standard model to create compact models for RF applications. Additionally, modeling effects such as avalanche at high current densities and non‑quasistatic phenomena will be compared with measurement data.

• Analyze measurement data for DC and RF characteristics.
• Develop HiCUM L2 V3.0 based compact model for HBT device.
• Extract compact model parameters for advanced device physics.
• Develop a procedure to incorporate new physical effects in the compact model and propose new models/modeling methods if applicable.
• Presentation to technical team after the project completion.

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

• Education – At least a second-year graduate student at time of application and actively pursuing a Master’s, or PhD in Electrical Engineering, Microelectronics or related field through an accredited degree program during the time of internship.
• Must have at least an overall 3.5 GPA and be in good academic standing.
• Language Fluency - English (Written & Verbal)
• Ability to work at least 20 to 40 hours per week during the internship.

• Prior related internship or co‑op experience
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
• Strong written and verbal communication skills
• Strong planning & organizational skills
• Semiconductor device physics / characterization knowledge
• Familiarity of Device Compact models
• Familiarity with industry standard compact model:
  High Current Model (HiCUM)
• Familiarity with design simulation tools such as Cadence Spectre or Keysight ADS
• Familiarity with Design Layout using the Cadence Virtuosa, ADS or other design tools
• Data analysis and problem solving
• Knowledge with shell scripting, multi-paradigm (Matlab/R) and high‑level programming languages (Python/Perl/Lisp)

$20.00 - $40.00

$0.00 - $0.00

The exact…