Principal Electro-Mechanical Engineer

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Position Role Type:

U.S. Citizen, U.S. Person, or Immigration Status Requirements:

Security Clearance:

At Raytheon, the foundation of everything we do is rooted in our values and a higher calling – to help our nation and allies defend freedoms and deter aggression. We bring the strength of more than 100 years of experience and renowned engineering expertise to meet the needs of today’s mission and stay ahead of tomorrow’s threat. Our team solves tough, meaningful problems that create a safer, more secure world.

Job Summary:

The RF Microelectronics/Module Design & Foundry Services Department at Raytheon in Andover, MA, is currently seeking a Principal Electro-Mechanical Engineer to develop leading-edge miniaturized 3

DHI sensors and systems to enable future generation technologies across Raytheon.

The successful candidate will be a highly motivated “self-starter” who will apply strong mechanical and electrical engineering skills to implement innovative solutions to challenging design criteria. They will be involved in research efforts including initial concepts, advanced technology demonstrations, and will have the opportunity to follow product development from beginning to end, including documentation, fabrication, assembly, and test/delivery of a range of microelectronics products.

This position requires strong interpersonal, written, and verbal communication skills to maintain positive relationships & satisfaction with Program leadership (Engineering and Program Management). Knowledge of semiconductor manufacturing processes and materials and prior experience working with contract manufacturers (OSATs) is highly desired.

The role requires knowledge of high-density microelectronic packaging designs including Interposers, organic substrates, wafer and chip bumping and general knowledge in areas of electronic components/devices such as ASICs and FPGAs, design of electronic packaging chassis and structures, interconnects (connectors/cables), and thermal management design of high-density electronic systems and electronic enclosures. The successful candidate will have the ability to bring new and fresh ideas to the team, with opportunities to explore research and innovation areas in a collaborative and fun team environment.

Additionally, the candidate is expected to follow established procedures in creation of technical data package work products, while working closely with program management and functional supervision to ensure the overall design objectives are met.

What You Will Do:

• Work with cross-functional hardware engineering teams to develop advanced microelectronics packages including 3
  
  DHI, 3D, and 2.5D (interposer + chiplets) and novel material and process solutions for RF, digital, mixed-signal, and photonics products
• Leverage industry-leading manufacturing and novel materials to achieve new levels of electro-mechanical performance and reliability

Qualifications You Must Have:

• Typically requires a Bachelor’s Degree in a Science, Technology, Engineering & Math (STEM) Field and a minimum of Eight (8) or more years of relevant experience (An advanced STEM degree could count for 3 years of experience) with mechanical and electrical engineering design.
• Experience performing circuit layout design using 2D CAD tools
• The ability to obtain and maintain a US security clearance. U.S. citizenship is required as only U.S. citizens are eligible for a security clearance

Qualifications We Prefer:

• A Master’s degree or PhD. in a Science, Technology, Engineering & Math (STEM) Field
• Experience in RF circuit design, including 3D EM simulation in HFSS or similar tools
• Circuit layout design experience using 2D and 3D CAD tools (Cadence Virtuoso and/or…