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RFIC Power Amplifier Design Engineer

Job in Atlanta, Fulton County, Georgia, 30383, USA
Listing for: Falcomm
Full Time position
Listed on 2026-06-22
Job specializations:
  • Engineering
    Electronics Engineer, Electrical Engineering, Systems Engineer, Telecoms Engineering
Salary/Wage Range or Industry Benchmark: 90000 - 120000 USD Yearly USD 90000.00 120000.00 YEAR
Job Description & How to Apply Below

Falcomm is a fabless semiconductor company developing high-efficiency RF power amplifier chips and RF front-end solutions for communications, aerospace, and defense applications. Our work is focused on turning advanced RF innovation into practical, high-performance products that solve real-world challenges across demanding environments.

This is an opportunity to contribute to cutting‑edge semiconductor development in a fast‑moving setting where technical depth and execution matter. You'll join a team focused on advancing RF front‑end performance and helping bring sophisticated power amplifier solutions from concept into silicon.

As an RFIC Power Amplifier Design Engineer, you will play a central role in shaping PA designs that support next‑generation communications and high‑performance RF systems. This role is well suited to someone who enjoys complex technical challenges, works well in a fast‑paced engineering environment, and is motivated by seeing advanced semiconductor design translated into real applications.

Responsibilities
  • Lead RFIC power amplifier design from architecture through tapeout and validation.
  • Drive PA tapeouts using SOI or SiGe technologies.
  • Develop IC layouts and perform PEX extraction as part of the design flow.
  • Perform electromigration analysis to support robust RFIC implementation.
  • Simulate the linear and non‑linear behavior of RF power amplifiers to meet performance targets such as gain, linearity, power, and bandwidth.
  • Master's or PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design.
  • 3+ years of experience in RF power amplifier design and development up to 60GHz, including PA tapeout experience using SOI or SiGe technologies.
  • Strong circuit design skills for RFIC power amplifier design.
  • Deep knowledge of differential and single‑ended power amplifiers, including modes of operation, matching, bias, and architecture considerations.
  • Experience with IC layout and PEX extraction, along with performing electromigration analysis and simulating both linear and non‑linear RF PA behavior to meet targets for gain, linearity, power, and bandwidth.
  • Proficiency with RFIC simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight System Vue, and Siemens Calibre, plus experience with EM simulators such as HFSS, Momentum, or EMX.
  • EM knowledge of passive RF components, including couplers, baluns, and matching networks.
  • Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi‑carrier techniques, and modulation types such as QPSK, APSK, and QAM.
  • Stock option plan
  • Medical, dental, and vision
  • Paid time off
  • Family leave

DISCLOSURE:

Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.

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